? 2011 ixys corporation, all rights reserved trench gate, high speed, igbts ds99754b (07/11) ixga90n33tc IXGQ90N33TC IXGQ90N33TCd1 v ces = 330v i cp = 360a v ce(sat) 1.80v symbol test conditions characteristic values (t j = 25 c, unless otherwise specified min. typ. max. bv ces i c = 250 a, v ge = 0v 330 v v ge(th) i c = 250 a, v ce = v ge 3.0 5.0 v i ces v ce = v ces , v ge = 0v 1 a t j = 125c 200 a i ges v ce = 0v, v ge = 20v 200 na v ce(sat) v ge = 15v, i c = 20a, note 1 1.40 v i c = 45a 1.54 1.80 v t j = 125c 1.54 v i c = 90a 1.82 v t j = 125c 1.95 v features ? low v ce(sat) - for minimum on-state conduction losses ? fast switching applications ? pdp screen drivers for pdp applications g = gate c = collector e = emitter tab = collector to-3p (ixgq) g c e to-263 aa (ixga) g e c (tab) c (tab) symbol test conditions maximum ratings v ces t j = 25c to 150c 330 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c (chip capability) 90 a i c(rms) lead current limit 75 a i c110 t c = 110c 38 a i cp t c < 150c, tp < 10 s 60 a i cp t c < 150c, tp < 10 s, duty cycle < 1 % 360 a p c t c = 25c 200 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l maximum lead temperature for soldering 300 c t sold 1.6 mm (0.062in.) from case for 10s 260 c m d mounting torque (to-3p) 1.13/10 nm/lb.in. weight to-263 2.5 g to-3p 5.5 g 90n33tc 90n33tcd1
IXGQ90N33TCd1 ixga90n33tc IXGQ90N33TC ixys reserves the right to change limits, test conditions, and dimensions. ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs i c = 45a, v ce = 10v, note 1 40 65 s c ies 2320 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 180 pf c res 21 pf q g 69 nc q ge i c = 45a, v ge = 15v, v ce = 0.5 ? v ces 15 nc q gc 13 nc t d(on) 13 ns t r 30 ns t d(off) 38 ns t f 49 ns t d(on) 13 ns t r 28 ns t d(off) 50 ns t f 74 ns r thjc 0.62 c/w r thcs to-3p 0.21 c/w resistive switching times, t j = 125c i c = 45a, v ge = 15v v ce = 240v, r g = 5 resistive switching times, t j = 25c i c = 45a, v ge = 15v v ce = 240v, r g = 5 reverse diode symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max v f i f = 20a, v ge = 0v, note 1 2.0 v r thjc 2.5 c/w dim. millimeter inches min. max. min. max. a 4.06 4.83 .160 .190 b 0.51 0.99 .020 .039 b2 1.14 1.40 .045 .055 c 0.40 0.74 .016 .029 c2 1.14 1.40 .045 .055 d 8.64 9.65 .340 .380 d1 8.00 8.89 .280 .320 e 9.65 10.41 .380 .405 e1 6.22 8.13 .270 .320 e 2.54 bsc .100 bsc l 14.61 15.88 .575 .625 l1 2.29 2.79 .090 .110 l2 1.02 1.40 .040 .055 l3 1.27 1.78 .050 .070 l4 0 0.13 0 .005 to-263 outline 1. gate 2. collector 3. emitter 4. collector bottom side to-3p outline 1 = gate 2,4 = collector 3 = emitter note: 1. pulse test, t 300 s, duty cycle, d 2%.
? 2011 ixys corporation, all rights reserved fig. 1. output characteristics @ 25oc 0 10 20 30 40 50 60 70 80 90 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 9v fig. 2. extended output characteristics @ 25oc 0 30 60 90 120 150 180 210 240 270 300 012345678910 v ce - volts i c - amperes v ge = 15v 13v 11v 7v 9v fig. 3. output characteristics @ 125oc 0 10 20 30 40 50 60 70 80 90 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 v ce - volts i c - amperes v ge = 15v 13v 11v 9v 7v 5v fig. 4. dependence of v ce(sat) on junction temperature 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 -50 -25 0 25 50 75 100 125 150 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 90a i c = 45a i c = 23a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 1.2 1.4 1.6 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 56789101112131415 v ge - volts v ce - volts i c = 90a 45a 23a t j = 25oc fig. 6. input admittance 0 20 40 60 80 100 120 140 4 4.5 5 5.5 6 6.5 7 7.5 v ge - volts i c - amperes t j = 125oc 25oc - 40oc IXGQ90N33TCd1 ixga90n33tc IXGQ90N33TC
IXGQ90N33TCd1 ixga90n33tc IXGQ90N33TC ixys reserves the right to change limits, test conditions, and dimensions. fig. 7. transconductance 0 10 20 30 40 50 60 70 80 90 0 20 40 60 80 100 120 140 i c - amperes g f s - siemens t j = - 40oc 25oc 125oc fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 10203040506070 q g - nanocoulombs v ge - volts v ce = 165v i c = 45a i g = 10 ma fig. 9. reverse-bias safe operating area 0 10 20 30 40 50 60 70 80 90 100 50 100 150 200 250 300 350 v ce - volts i c - amperes t j = 150oc r g = 20 dv / dt < 10v / ns fig. 10. capacitance 10 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarad s f = 1 mhz c ies c oes c res fig. 12. maximum transient thermal impedance 0.01 0.10 1.00 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - oc / w fig. 11. forward-bias safe operating area 1 10 100 1000 1 10 100 1000 v ce - volts i c - amperes t j = 150oc t c = 25oc single pulse v ce (sat) limit 1s 10s 100s 1ms
? 2011 ixys corporation, all rights reserved ixys ref: g_90n33tc (4g) 5-30-07-c fig. 13. resistive turn-on rise time vs. junction temperature 25 26 27 28 29 30 31 32 33 34 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t r - nanosecond s r g = 5 v ge = 15v v ce = 240v i c = 90a i c = 45a fig. 14. resistive turn-on rise time vs. collector current 23 24 25 26 27 28 29 30 31 32 33 34 35 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 i c - amperes t r - nanosecond s r g = 5 v ge = 15v v ce = 240v t j = 125oc t j = 25oc fig. 16. resistive turn-on switching times vs. gate resistance 15 20 25 30 35 40 45 50 55 60 65 70 75 4 6 8 10 12 14 16 18 20 r g - ohms t r - nanosecond s 12 13 14 15 16 17 18 19 20 21 22 23 24 t d ( o n ) - nanosecond s t r t d(on) - - - - t j = 125oc, v ge = 15v v ce = 240v i c = 90a, 45a fig. 17. resistive turn-off switching times vs. junction temperature 45 50 55 60 65 70 75 80 85 90 95 25 35 45 55 65 75 85 95 105 115 125 t j - degrees centigrade t f - nanosecond s 30 33 36 39 42 45 48 51 54 57 60 t d ( o f f ) - nanosecond s t f t d(off) - - - - r g = 5 , v ge = 15v v ce = 240v i c = 90a, 45a fig. 18. resistive turn-off switching times vs. collector current 20 30 40 50 60 70 80 90 100 110 120 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 i c - amperes t f - nanosecond s 30 33 36 39 42 45 48 51 54 57 60 t d ( o f f ) - nanosecond s t f t d(off) - - - - r g = 5 , v ge = 15v v ce = 240v t j = 125oc t j = 25oc fig. 19. resistive turn-off switching times vs. gate resistance 70 75 80 85 90 95 100 105 110 115 120 4 6 8 101214161820 r g - ohms t f - nanosecond s 30 40 50 60 70 80 90 100 110 120 130 t d ( o f f ) - nanosecond s t f t d(off) - - - - t j = 125oc, v ge = 15v v ce = 240v i c = 45a i c = 90a IXGQ90N33TCd1 ixga90n33tc IXGQ90N33TC
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